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Transistors
2SC3354
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
4.00.2 2.00.2 (0.8) 3.00.2
Unit: mm
Features
* Optimum for high-density mounting * Allowing supply with the radial taping * High transition frequency fT
0.75 max.
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 50 300 150 -55 to +150 Unit V V V mA mW C C
1 2 3 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1
15.60.5
(0.8)
7.6
1: Emitter 2: Collector 3: Base NS-B1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio * Transition frequency Reverse transfer capacitance (Common base) Reverse transfer capacitance (Common emitter) Power gain Symbol VCBO VEBO VBE hFE fT Crb Cre GP Conditions IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = -2 mA VCB = 10 V, IE = -2 mA VCB = 10 V, IE = -15 mA, f = 200 MHz VCE = 6 V, IC = 0, f = 1 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz VCB = 10 V, IE = -1 mA, f = 100 MHz 25 600 1 200 0.8 1.0 17 1.5 Min 30 3 720 250 1 600 Typ Max Unit V V mV MHz pF pF dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE T 600 to 1 300 S 900 to 1 600
Publication date: March 2003
SJC00132BED
1
2SC3354
PC Ta
500
60
IC VCE
Ta = 25C
60
IC VBE
25C 50 VCE = 10 V
Collector power dissipation PC (mW)
50
Collector current IC (mA)
Collector current IC (mA)
400
Ta = 75C
-25C
40 IB = 300 A 30 250 A 200 A 20 150 A 100 A 10 50 A
40
300
30
200
20
10
100
0 0 2 4 6 8
0
0
40
80
120
160
10
12
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 240
hFE IC
VCE = 10 V
fT I E
1 600 f = 100 MHz Ta = 25C VCB = 10 V 6V 800
Forward current transfer ratio hFE
10
160 Ta = 75C 120 25C -25C
1
Ta = 75C 25C
80
0.1
-25C
Transition frequency fT (MHz)
200
1 200
400
40
0.01 0.1
1
10
100
0 0.1
1
10
100
0 - 0.1
-1
-10
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
5 IE = 0 f = 1 MHz Ta = 25C
120
Zrb IE
2.4
Cre VCE
Reverse transfer capacitance Cre (pF) (Common emitter)
f = 2 MHz Ta = 25C
Reverse transfer impedance Zrb ()
4
100
2.0
IC = 1 mA f = 10.7 MHz Ta = 25C
80
1.6
3
60
1.2
2
40 VCE = 6 V 10 V
0.8
1
20
0.4
0
1
10
100
0 - 0.1
-1
-10
0 0.1
1
10
100
Collector-base voltage VCB (V)
Emitter current IE (mA)
Collector-emitter voltage VCE (V)
2
SJC00132BED
2SC3354
GP I E
30 f = 100 MHz V = 10 V CE Rg = 50 Ta = 25C 6V 25
12
NF IE
VCE = 10 V f = 100 MHz Rg = 50 k Ta = 25C
10
20
Noise figure NF (dB)
-1 -10 -100
Power gain GP (dB)
8
15
6
10
4
5
2
0 - 0.1
0 - 0.1
-1
-10
-100
Emitter current IE (mA)
Emitter current IE (mA)
SJC00132BED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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